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MBR1090CT, MBR10100CT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 89125
Revision: 26-Apr-10
2
Notes
(1)
Pulse test: 300
μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR1090CT MBR10100CT UNIT
Maximum instantaneous forward voltage per diode (1)
IF
= 5.0 A
IF
= 5.0 A
TC
= 125 °C
TC
= 25 °C
VF
0.75
0.85
V
Maximum reverse current per diode at working peak
reverse voltage (2)
TJ
= 25 °C
TJ
= 100 °C
IR
100
6.0
μA
mA
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Typical thermal resistance per diode RθJC
4.4 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR10100CT-E3/4W 1.87 4W 50/tube Tube
Figure 1. Forward Current Derating Curve
0
2
4
6
10
0
50
100
150
8
Resistive or Inductive Load
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
20
60
40
100
80
120
1
100
10
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
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